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Charge vs energy transfer in graphene/transition metal dichalcogenide van der Waals heterostructures - Stéphane Berciaud - Vendredi 10 novembre 2017 à 10 h 30

INSP - UPMC - 4 place Jussieu - 75005 Paris - Barre 22-12, 4e étage, salle 426

Stéphane Berciaud, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS)

Abstract

The rise of a vast family of two-dimensional materials (such as graphene, boron nitride and transition metal dichalcogenides) with unique electronic and optical properties has opened exciting perspectives for the design and study of van der Waals heterostructures [1]. The behavior of photoexcited carriers and excitons in such heterostructures is strongly affected by near-field interactions, such as interlayer charge transfer [2] and/or energy transfer [3,4]. Unravelling the efficiency and microscopic mechanisms of charge and energy transfer at atomically sharp heterointerfaces is of utmost importance for optoelectronic and energy-related applications. In this presentation, I will start with a general introduction to our activities on two-dimensional materials at IPCMS and focus on recent optical studies of charge and energy transfer in hybrid and van der Waals and heterostructures [4,5].

[1] A.K. Geim and I. V. Grigorieva, Nature 499, 419 (2013)
[2] G. Konstantatos et al. Nature Nanotechnology 7, 363 (2012)
[3] Z. Chen, S. Berciaud, C. Nuckolls, T.F Heinz & L.E. Brus ACS Nano 4, 2964 (2010)
[4] F. Federspiel, G. Froehlicher, M. Nasilowski, S. Pedetti, A. Mahmood, B. Doudin, S. Park, J-O Lee, D. Halley, B. Dubertret, P. Gilliot, & S. Berciaud Nano Letters 15, 1252 (2015)
[5] G. Froehlicher, E. Lorchat, S. Berciaud Arxiv 1703.05396