Equipe « Spectroscopie des nouveaux états quantiques »
Vendredi 24 octobre 2014 à 14 h - INSP - 4 place Jussieu - 75252 PARIS Cedex 05 - Barre 22-23, 3e étage, salle 317
« Nano-scale electronic inhomogeneities in ultra-thin superconducting »
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Abstract
In order to better understand the various processes taking place at the superconductor-insulator transition (SIT), we have probed simultaneously the global and local electronic properties of NbN ultrathin films, elaborated ex-situ on sapphire substrate. The transition was approached by reducing the films thickness, increasing the normal state square resistance to several kiloOhms. The corresponding Tc’s of the studied films ranged from about Tc≈15K, which is close to TC-bulk, to Tc≈3.8K (Tc/TC-bulk≈0.23). In the range 0.4TC-bulk
Composition du jury
Dimitri Roditchev (directeur de thèse)
Christophe Brun (co-directeur de thèse)
Brigitte Leridon (membre invité)
Konstantin Ilin (membre invité)
Claude Chapelier (rapporteur)
Claire Marrache-Kikuchi (rapportrice)
Hélène Bouchiat (examinatrice)
Abhay Shukla (examinateur)