Institut des
NanoSciences de Paris
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Soutenance de thèse de Valerio Pasquali - Vendredi 8 septembre 2017 à 14 h

Valerio Pasquali, doctorant dans l’équipe Croissance et propriétés de systèmes hybrides en couches minces soutiendra sa thèse le vendredi 8 septembre 2017 à 14 h
INSP - UPMC - 4 place Jussieu - 75005 Paris - Barre 22-23, 3e étage, salle 317

Fabrication and characterisation of strain-free GaAs/AlAs quantum dot devices

Abstract

In this talk, I present the fabrication by molecular beam epitaxy of strain-free GaAs/AlGaAs quantum dots (QDs) by infilling in-situ etched nanoholes.

After describing the process, I discuss how this QDs have been embedded in a two-dimensional electron gas (2DEG) heterostructure. The effect of the QDs on the 2DEG mobility will be discussed by comparing the magneto-transport measurements of the QD-2DEG sample with reference samples without QDs grown with similar conditions.

Finally, I show the fabrication and characterisation of a lateral p-n junction with embedded QDs by locally inverting the n-type dopant (Silicon) with a p-type dopant (Zn). In particular, I will show the main result of this project, which is the elecotroluminescence of a single dot in proximity of the lateral p-n junction.

Thèse financée par le LabEx MATISSE

Jury

  • Chantal FONTAINE (LAAS, Toulouse, France) - Rapporteur
  • Ian FARRER (University of Sheffield, UK) - Rapporteur
  • Gwendal FÈVE (LPA, Paris, France) - Examinateur
  • Isabelle SAGNES (C2N, Marcoussis, France) - Examinateur
  • Massimiliano MARANGOLO (INSP, Paris, France) - Directeur de thèse
  • Paola ATKINSON (INSP, Paris, France) - Membre invité
  • Masaya KATAOKA (NPL, Teddington, UK) - Membre invité