Valerio Pasquali, doctorant dans l’équipe Croissance et propriétés de systèmes hybrides en couches minces soutiendra sa thèse le vendredi 8 septembre 2017 à 14 h
INSP - UPMC - 4 place Jussieu - 75005 Paris - Barre 22-23, 3e étage, salle 317
Fabrication and characterisation of strain-free GaAs/AlAs quantum dot devices
Abstract
In this talk, I present the fabrication by molecular beam epitaxy of strain-free GaAs/AlGaAs quantum dots (QDs) by infilling in-situ etched nanoholes.
After describing the process, I discuss how this QDs have been embedded in a two-dimensional electron gas (2DEG) heterostructure. The effect of the QDs on the 2DEG mobility will be discussed by comparing the magneto-transport measurements of the QD-2DEG sample with reference samples without QDs grown with similar conditions.
Finally, I show the fabrication and characterisation of a lateral p-n junction with embedded QDs by locally inverting the n-type dopant (Silicon) with a p-type dopant (Zn). In particular, I will show the main result of this project, which is the elecotroluminescence of a single dot in proximity of the lateral p-n junction.
Thèse financée par le LabEx MATISSE
Jury
- Chantal FONTAINE (LAAS, Toulouse, France) - Rapporteur
- Ian FARRER (University of Sheffield, UK) - Rapporteur
- Gwendal FÈVE (LPA, Paris, France) - Examinateur
- Isabelle SAGNES (C2N, Marcoussis, France) - Examinateur
- Massimiliano MARANGOLO (INSP, Paris, France) - Directeur de thèse
- Paola ATKINSON (INSP, Paris, France) - Membre invité
- Masaya KATAOKA (NPL, Teddington, UK) - Membre invité