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Accueil > Evénements > Séminaires > Archives 2016 > Growth of semiconductor

Séminaire « Mécanismes de la croissance » de l’INSP

Growth of semiconductor nanowires using the VLS method - Fabrice Oehler - Lundi 13 juin 2016 à 11 h

INSP - UPMC - 4 place Jussieu - 75005 Paris - Barre 22-12, 4e étage, salle 426

Fabrice Oehler – CNRS LPN


Semi-conductor nanowires have been called various names since their initial discoveries in the 1960s, from whiskers to nano-rod, nano-cone or nano-wires. They all share a large aspect ratio, with a small lateral dimension (’diameter’) in the order of 100nm and a long longitudinal dimension (’length’). Today, most of the nanowires obtained with bottom-up techniques are grown using Molecular Beam Epitaxy (MBE) or Chemical Vapour Depositon (CVD). These structures do not show natively quantum confinement, but they can be used as hosts for a variety of quatum dots, disk or wells. Here, we will review the typical growth mode of nanowires, the Vapour Liquid Solid growth mechanism (VLS) and its application to the growth of IV-IV and III-V semiconductor nanowires and heterostructures.