Institut des
NanoSciences de Paris
Accueil > Evénements > Séminaires > Archives 2014 > Spectroscopic investigati

Séminaire « Magnétisme et Physique du spin » de l’INSP

Spectroscopic investigations of electronic devices in-operando conditions - Piero Torelli - Vendredi 12 décembre 2014 à 11 h

INSP - 4 place Jussieu - 75252 PARIS Cedex 05 - Barre 22-32 - 2e étage, salle 201

Piero Torellia - TASC laboratory, IOM-CNR, s.s. 14 km 163.5, 34149 Basovizza, Trieste, Italy


One of the new frontier in physics is the study of the materials properties in-operando conditions which means the properties of the materials submitted to an external stimulus. One simple example is the magnetoelectric coupling : the possibility of control the magnetic properties of a device by an electric field. Up to now important steps toward the control of magntoelectric coupling in suitable nanostructures has been realized[1], however the current research is mainly based on transport measurements and magnetic measurements such as SQUID and MOKE which can address the magnetic response but do not the electronic structure of the materials. Here I will present an experimental set-up and the experimental procedure to perform the investigation of the magnetic and electronic structure of materials by performing XMCD under applied bias voltage. The High Energy branch (APE-HE) is optimized for Near Edge X-ray absorption Fine Structure (NEXAFS) and magnetic circular dichroism (XMCD) and in the framework of the NFFA demonstrator project, we recently developed a set-up for the investigation of the magnetic properties of thin films and nanostructures in-operando conditions. Within this framework I will present few examples of in-operando experiments : at first I will show the variation of the magnetic properties of a ferromagnet when is subjected to an electric field in a ferromagnetic/ferroelectric junction [2], successively I will present how the same set-up can be exploited for the investigation of other interesting effects such as bistability in resistive switching devices. Moreover in the new set up we have the possibility of investigate the electric properties of junctions relating them to the magnetic properties of the different layers[3].

[1] Y. W. Yin et al. Nature Mater. 12, 397 (2013)
[2] G. Radaelli et al. Nature Commun. 5, 3404 (2014)
[3] B. Gobaut et al. JMMM in press.